Infineon Technologies CFY27
HiRel Ku-Band GaAs General Purpose MESFET
| Part No. | CFY27 |
|---|---|
| Datasheet | CFY27 Download |
| Manufacturer |  Infineon Technologies |
| Description | HiRel Ku-Band GaAs General Purpose MESFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230 Unit V V V mA mA dBm °C °C mW °C Rth JS ≤ 150 (tbc.) K/W 1) For VDS ≤ 5 V. For VDS > 5 V, derating is required. 2) At TS = + 40 °C. For TS > + 40 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 9 Draft D, September 99 CFY27ELECTRICAL CHARACTERISTICS
(at TA=25°C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 1 mA Dra...
