CFY25
Key Features
- HiRel discrete and Microwave semiconductor
- For professional pre- and driver- amplifiers
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| CFY25 | Siemens Semiconductor Group | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-20 | Siemens Semiconductor Group | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-17 | Siemens Semiconductor Group | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY25-23 | Siemens Semiconductor Group | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
| CFY27 | Infineon | HiRel Ku-Band GaAs General Purpose MESFET |
| CFY27-38 | Infineon | HiRel Ku-Band GaAs General Purpose MESFET |