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CY15B116QN

Manufacturer: Infineon

CY15B116QN datasheet by Infineon.

CY15B116QN datasheet preview

CY15B116QN Datasheet Details

Part number CY15B116QN
Datasheet CY15B116QN-Infineon.pdf
File Size 325.07 KB
Manufacturer Infineon
Description 16Mb Auto Ferroelectric RAM
CY15B116QN page 2 CY15B116QN page 3

CY15B116QN Overview

Functional description The EXCELON™ Auto CY15X116QN is a low power, 16-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and...

CY15B116QN Key Features

  • 16-Mbit ferroelectric random access memory (F-RAM) logically organized as 2048K × 8
  • Virtually unlimited endurance 100 trillion (1014) read/writes
  • 151-year data retention (see “Data retention and endurance” on page 24)
  • Infineon instant non-volatile write technology
  • Advanced high-reliability ferroelectric process
  • Fast SPI
  • Up to 40 MHz frequency
  • Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)
  • Sophisticated write protection scheme
  • Hardware protection using the write protect (WP) pin
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CY15B116QN Distributor

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