CY15B116QN
Features
- 16-Mbit ferroelectric random access memory (F-RAM) logically organized as 2048K × 8
- Virtually unlimited endurance 100 trillion (1014) read/writes
- 151-year data retention (see “Data retention and endurance” on page 24)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Fast SPI
- Up to 40 MHz frequency
- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the write protect (WP) pin
- Software protection using write disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
- Device ID and serial number
- Manufacturer ID and product ID
- Unique device ID
- Serial number
- Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to three standard reflow soldering cycles
- Low-power consumption
- 2.7 m A (typ) active current at 40 MHz
- 14 µA (typ) standby current
- 1.5 µA (typ) Deep...
