CY15B116QSN
Features
- 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (see “Data retention and endurance” on page 94)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Single and multi I/O serial peripheral interface (SPI)
- Serial bus interface SPI protocols
- Supports SPI Mode 0 (0, 0) and Mode 3f (1, 1) for all SDR mode transfers
- Supports SPI Mode 0 (0, 0) for all DDR mode transfers
- Extended I/O SPI protocols
- Dual SPI (DPI) protocols
- Quad SPI (QPI) protocols
- SPI clock frequency
- Up to 108-MHz frequency SPI single data rate (SDR)
- Up to 46-MHz frequency SPI double data rate (DDR)
- e Xecute-In-Place (XIP) for memory read/write
- Write protection, data security, and data integrity
- Hardware protection using the write protect (WP) pin
- Software block protection
- Embedded error correction code (ECC)...
