CY15V104QN
Features
- 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (see “Data retention and endurance” on page 24)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI)
- Up to 50 MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
- Device ID and serial number
- Device ID includes manufacturer ID and product ID
- Unique ID
- Serial number
- Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to 3 standard reflow soldering cycles
- Low-power consumption
- 400 µA (typ) active current at 1 MHz
- 3.7 m A...
