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CY15V104QN

Manufacturer: Infineon

CY15V104QN datasheet by Infineon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY15V104QN datasheet preview

CY15V104QN Datasheet Details

Part number CY15V104QN
Datasheet CY15V104QN CY15B104QN Datasheet (PDF)
File Size 419.27 KB
Manufacturer Infineon
Description Auto Ferroelectric RAM
CY15V104QN page 2 CY15V104QN page 3

CY15V104QN Overview

Functional description The EXCELON™ Auto CY15X104QN is an automotive grade, 4Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM,...

CY15V104QN Key Features

  • 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8
  • Virtually unlimited endurance of 100 trillion (1014) read/write cycles
  • 151-year data retention (see “Data retention and endurance” on page 24)
  • Infineon instant non-volatile write technology
  • Advanced high-reliability ferroelectric process
  • Fast serial peripheral interface (SPI)
  • Up to 50 MHz frequency
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write protection scheme
  • Hardware protection using the Write Protect (WP) pin
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