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CYRS1069G - 16-Mb Static RAM

General Description

4 2 Selection guide5 3 Pin configuration 6 4 Maximum ratings 7 5 Operating range 8 6 DC electrical characteristics9 7 Capacitance 10 8 Thermal resistance 11 9 AC test loads and waveforms 12 10 Data retention 13 10.1 Data retention characteristics13 10.2 Data retention waveform 13 11 AC switching cha

Key Features

  • Temperature ranges - Military/Space:.
  • 55°C to 125°C.
  • High speed - tAA = 10 ns.
  • Low active power - ICC = 90 mA at 10 ns (typical).
  • Low CMOS standby power - ISB2 = 20 mA (typical).
  • 1.0 V data retention.
  • Automatic power-down when deselected.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Easy memory expansion with CE and OE features.
  • Available in Gold plated lead 36-pin ceramic flat package.

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CYRS1069G 16-Mb Static RAM with ECC and RADSTOP™ technology 2M × 8 Radiation performance • Radiation data - Total dose =200 Krad - Embedded error-correcting code (ECC) for single-bit error correction[1, 2] - Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day - Neutron = 1.5 × 1011 N/cm2 - Dose rate: • > 3.0 × 108 (rad(Si)/s) (R/W) • > 2.0 × 109 (rad(Si)/s) (Static) - Latch up immunity > 60 MeV.