CYW20835 Datasheet | Infineon

AIROC™ Bluetooth® LE system on chip General description The Infineon AIROC™ CYW20835 Bluetooth® LE So C is a Bluetooth® 5.4 core spec pliant device for Io T applications. Manufactured using the industry’s advanced 40-nm CMOS low-power process, the CYW20835 employs high levels of integration to minimize external ponents, reducing the device footprint and the costs associated with implementing Bluetooth® Low Energy solutions. CYW20835 Bluetooth® LE So C is designed to support the wide spectrum of Bluetooth® Low Energy use cases for home automation, accessory, sensors (medical, home, security, and industrial), lighting, Bluetooth® mesh, wireless input devices, and remote controls, or any Bluetooth® LE connected Io T application. Features - Bluetooth® subsystem - plies with Bluetooth® core specification v5.4 with LE 2-Mbps support - Bluetooth® Low Energy - Supports Adaptive Frequency Hopping (AFH) - Programmable TX power up to 12 d Bm - Rx sensitivity - 94.5 d Bm (Bluetooth® LE) - Ultra-low-power radio - RX current 8 m A - TX current 18 m A at 12 d Bm - Coexistence support - Support for global coexistence interface for easy coexistence implementation with select Infineon AIROC™ Wi-Fi devices - MCU subsystem - 96-MHz Arm® Cortex®-M4 microcontroller unit MCU with floating point unit (FPU) - Supports Serial Wire Debug (SWD) - Runs Bluetooth® stack and application - Memory subsystem - 384-KB RAM - 2-MB ROM - Audio Features and interfaces - 1× I2S with master and slave modes - 1× PCM - PDM - Analog front end for analog microphone - Clocks - On-chip 32 k Hz...