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D0212C5 - Power MOSFET

General Description

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2 Table of Contents3 Maximum ratings4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics diagram 5 Package Drawings 9 Revision History 10 Disclaimer….

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Diode Silicon Carbide Schottky Diode IDM02G120C5 5th Generation CoolSiCâ„¢ 1200 V SiC Schottky Diode Final Data Sheet Rev. 2.