D0212C5 Datasheet | Infineon

Diode Silicon Carbide Schottky Diode IDM02G120C5 5th Generation Cool Si C™ 1200 V Si C Schottky Diode Final Data Sheet Rev. 2.1, 2021-06-09 Industrial Power Control IDM02G120C5 5th Generation Cool Si C™ 1200 V Si C Schottky Diode Cool Si CTM Si C Schottky Diode Features : - Revolutionary semiconductor material - Silicon Carbide - No reverse recovery current / No forward recovery - Temperature independent switching behavior - Low forward voltage even at high operating temperature - Tight forward voltage distribution - Excellent thermal performance - Extended surge current capability - Specified dv/dt ruggedness - Qualified according to JEDEC1) for target applications - Pb-free lead plating; Ro HS pliant Benefits 1 2 - System efficiency improvement over Si diodes - Enabling higher frequency / increased power density solutions - System size/cost savings due to reduced heatsink requirements and smaller magnetics - Reduced EMI - Highest efficiency across the entire load...