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D1265C5 Datasheet Sic Schottky Barrier Diodes

Manufacturer: Infineon

Overview: SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW12G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!

General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

More Datasheets from Infineon

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D1265C5 Distributor