DD800S17H4_B2 - IGBT

Infineon

Key Features

Extended operating temperature Tvj op.
High current density.
Tvj op = 150°C Mechanical Features.
4 kV AC 1min insulation.
AlSiC base plate for increased thermal cycling capability.
Package with CTI > 400.
High creepage and clearance distances.
High power and thermal cycling capability.
High power density.
IHM B housing Module Label Code Barcode Code 128 DMX - Code prepared by: WB approved by: IB Content.

DD800S17H4_B2 igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	DD800S17H4_B2
Manufacturer	Infineon
File Size	591.24 KB
Description	IGBT
Datasheet	DD800S17H4_B2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module DD800S17H4_B2 IHM-BModul IHM-Bmodule TypischeAnwendungen • 3-Level-Applikationen • AktiverEingang(Rückspeisung) • Hochleistungsumrichter • Multi-LevelUmrichter • Traktionsumrichter • Windgeneratoren ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • HoheStromdichte • Tvjop=150°C MechanischeEigenschaften • 4kVAC1minIsolationsfestigkeit • AlSiC Bodenplatte für erhöhte thermische Lastwechselfestigkeit • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte • IHMBGehäuse VCES = 1700V IC nom = 800A / ICRM = 1600A TypicalApplications • 3-level-applications • Activefrontend(energyrecovery) • Highpowerconverters