Datasheet4U Logo Datasheet4U.com

DF100R07W1H5FP_B53 - IGBT

Key Features

  • CoolSiC (TM) Schottky diode gen 5.
  • Increased blocking voltage capability up to 650V.
  • Low inductive design.
  • Low switching losses Mechanical Features.
  • Al2O3 substrate with low thermal resistance.
  • Integrated NTC temperature sensor.
  • PressFIT contact technology.
  • Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 DMX - Code Content of the Code Module Serial Number Module Material Number Production Order N.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DF1005 1A Miniature Glass Passivated Single-Phase Bridge Rectifiers CITC
DF1005S 1A Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers CITC
DF100AA120 DF100AA120 INCHANGE
DF100AA120 DIODE SanRex
DF100AA160 DIODE SanRex

Other Datasheets by Infineon

Part Number Description
DF100R07W1H5FP_B54 IGBT
DF1000R17IE4 IGBT
DF1000R17IE4D_B2 IGBT
DF1000R17IE4P IGBT
DF11MR12W1M1P_B11 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DF100R07W1H5FP_B53 EasyPACK™ModulmitTRENCHSTOP™5H5undCoolSiC™DiodeundPressFIT/bereitsaufgetragenem ThermalInterfaceMaterial EasyPACK™modulewithTRENCHSTOP™5H5andCoolSiC™diodeandPressFIT/pre-appliedThermal InterfaceMaterial J TypischeAnwendungen • SolarAnwendungen ElektrischeEigenschaften • CoolSiC(TM)SchottkyDiodeGen5 • ErhöhteSperrspannungsfestigkeitauf650V • NiederinduktivesDesign • NiedrigeSchaltverluste MechanischeEigenschaften • Al2O3 Substrat mit kleinem thermischen Widerstand • IntegrierterNTCTemperaturSensor • PressFITVerbindungstechnik • Thermisches Interface Material bereits aufgetragen VCES = 650V IC nom = 50A / ICRM = 100A TypicalApplications • Solarapplications ElectricalFeatures • CoolSiC(TM)Schottkydiodegen5 • Increase