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DF900R12IP4D - IGBT

Datasheet Summary

Features

  • Extended Operation Temperature Tvj op.
  • High DC Stability.
  • High Short Circuit Capability, Self Limiting Short Circuit Current.
  • VCEsat with positive Temperature Coefficient.
  • Low VCEsat Mechanical Features.
  • 4 kV AC 1min Insulation.
  • Package with CTI > 400.
  • High Creepage and Clearance Distances.
  • High Power and Thermal Cycling Capability.
  • High Power Density.
  • Substrate for Low Thermal Resistance Module.

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Datasheet preview – DF900R12IP4D

Datasheet Details

Part number DF900R12IP4D
Manufacturer Infineon
File Size 1.72 MB
Description IGBT
Datasheet download datasheet DF900R12IP4D Datasheet
Additional preview pages of the DF900R12IP4D datasheet.

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Full PDF Text Transcription

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF900R12IP4D PrimePACK™2ModulmitTrench/FeldstoppIGBT4,größererEmitterControlled4Diode PrimePACK™2modulewithTrench/FieldstopIGBT4,enlargedEmitterControlled4diode VorläufigeDaten/PreliminaryData TypischeAnwendungen • Chopper-Anwendungen ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • GroßeDC-Festigkeit • Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom • VCEsatmitpositivemTemperaturkoeffizienten • NiedrigesVCEsat MechanischeEigenschaften • 4kVAC1minIsolationsfestigkeit • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte • SubstratfürkleinenthermischenWiderstand VCES =
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