Datasheet4U Logo Datasheet4U.com

DF900R12IP4DV - IGBT

Datasheet Summary

Features

  • Extended Operation Temperature Tvj op.
  • High DC Stability.
  • High Short Circuit Capability, Self Limiting Short Circuit Current.
  • Low VCEsat.
  • VCEsat with positive Temperature Coefficient Mechanical Features.
  • 4 kV AC 1min Insulation.
  • Package with CTI > 400.
  • High Creepage and Clearance Distances.
  • High Power and Thermal Cycling Capability.
  • High Power Density.
  • Substrate for Low Thermal Resistance Module.

📥 Download Datasheet

Datasheet preview – DF900R12IP4DV

Datasheet Details

Part number DF900R12IP4DV
Manufacturer Infineon
File Size 1.72 MB
Description IGBT
Datasheet download datasheet DF900R12IP4DV Datasheet
Additional preview pages of the DF900R12IP4DV datasheet.

📁 Similar Datasheet

  • DF903S09B - Dielectric Filters (Token)
  • DF903S6A - Dielectric Filters (Token)
  • DF906S20B - Dielectric Filters (Token)
  • DF9-11P-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-11S-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-13P-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-13S-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-15P-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-15S-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
  • DF9-17P-1V - 1mm Pitch SMT Board to Board Connector(Standard Interface Connector Compliant with VESA FPDI-1) (Hirose)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF900R12IP4DV PrimePACK™2ModulmitTrench/FeldstoppIGBT4,größererEmitterControlled4Diode PrimePACK™2modulewithTrench/FieldstopIGBT4,enlargedEmitterControlled4diode VorläufigeDaten/PreliminaryData TypischeAnwendungen • Hybrid-Nutzfahrzeuge ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • GroßeDC-Festigkeit • Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom • NiedrigesVCEsat • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • 4kVAC1minIsolationsfestigkeit • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte • SubstratfürkleinenthermischenWiderstand VC
Published: |