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DF900R12IP4DV - IGBT

Key Features

  • Extended Operation Temperature Tvj op.
  • High DC Stability.
  • High Short Circuit Capability, Self Limiting Short Circuit Current.
  • Low VCEsat.
  • VCEsat with positive Temperature Coefficient Mechanical Features.
  • 4 kV AC 1min Insulation.
  • Package with CTI > 400.
  • High Creepage and Clearance Distances.
  • High Power and Thermal Cycling Capability.
  • High Power Density.
  • Substrate for Low Thermal Resistance Module.

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Other Datasheets by Infineon

Part Number Description
DF900R12IP4D IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DF900R12IP4DV PrimePACK™2ModulmitTrench/FeldstoppIGBT4,größererEmitterControlled4Diode PrimePACK™2modulewithTrench/FieldstopIGBT4,enlargedEmitterControlled4diode VorläufigeDaten/PreliminaryData TypischeAnwendungen • Hybrid-Nutzfahrzeuge ElektrischeEigenschaften • ErweiterteSperrschichttemperaturTvjop • GroßeDC-Festigkeit • Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom • NiedrigesVCEsat • VCEsatmitpositivemTemperaturkoeffizienten MechanischeEigenschaften • 4kVAC1minIsolationsfestigkeit • GehäusemitCTI>400 • GroßeLuft-undKriechstrecken • HoheLast-undthermischeWechselfestigkeit • HoheLeistungsdichte • SubstratfürkleinenthermischenWiderstand VC