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ESD103-B1-02 - Bi-directional Femto Farad Capacitance TVS Diode

General Description

Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) Pin 1 TSLP -2 Pin 2 Figure 1 TSSLP - 2 a) Pin configuration Pin configuration and Schematic diagram Pin 2 b) Schematic diagram Table 1 Ordering Information Type Package ESD103-B1-02ELS TSSLP-2-4 ESD103-B1-02EL TSLP-2-20 Configuration 1 line, b

Key Features

  • ESD/Transient protection of RF and ultra-high speed signal lines according to:.
  • IEC61000-4-2: ±10 kV (contact).
  • Extremely low capacitance CL = 0.09 pF (typical) at f = 1 GHz.
  • Maximum working voltage: VRWM = ±15 V.
  • Very low reverse current: IR < 0.1 nA (typ. ).
  • Very low series inductance down to 0.2 nH typical (TSSLP-2-4).
  • Extremely small form factor down to 0.62 x 0.32 x 0.31 mm².
  • Pb-free package (RoHS compliant) 1.2 Applic.

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Datasheet Details

Part number ESD103-B1-02
Manufacturer Infineon
File Size 392.99 KB
Description Bi-directional Femto Farad Capacitance TVS Diode
Datasheet download datasheet ESD103-B1-02 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.3, 2014-06-12 Final Power Management & Multimarket Edition 2014-06-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.