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TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FP75R12KT3
EconoPIM™3ModulmitschnellemTrench/FeldstopIGBT3undHighEfficiencyDiode EconoPIM™3modulewithfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 150
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VCES
IC nom IC
ICRM
Ptot
VGES
1200 7
FP75R12KT3 Datasheet
