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TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FP75R12KT4_B15
EconoPIM™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPIM™3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage
VorläufigeDaten PreliminaryData
VCES IC nom ICRM Ptot VGES
1200 75 150 385
+/-20
FP75R12KT4_B15 Datasheet
