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TechnischeInformation/TechnicalInformation
IGBT-Module IGBT-modules
FS150R12KT4_B9
EconoPACK™3ModulmitTrench/FeldstopIGBT4undverdoppelterEmitterControlled4DiodenBestückung
EconoPACK™3modulewithtrench/fieldstopIGBT4anddoubledmountingEmitterControlled4diode
VorläufigeDaten
IGBT,Wechselrichter/IGBT,Inverter
PreliminaryData
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung Collector-emittervoltage
Tvj = 25°C
VCES
1200
V
Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
IC nom
150
A
PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
300
A
Gesamt-Verlustleistung Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
750
W
Gate
FS150R12KT4_B9 Datasheet
