H20R1353 - Reverse conducting IGBT

Infineon

General Description

Key Features

Offers new higher breakdown voltage to 1350V for improved reliability.
Powerful monolithic body diode with low forward voltage designed for soft commutation only.

📥 Download Datasheet

H20R1353 reverse conducting igbt by Infineon - Datasheet Preview

Datasheet Details

Part number	H20R1353
Manufacturer	Infineon
File Size	1.75 MB
Description	Reverse conducting IGBT
Datasheet	H20R1353 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
H20R120	IHW15N120R	Infineon Technologies
H20R1202	Reverse Conducting IGBT	Infineon Technologies
H2000CHXX	PHASE CONTROL THYRISTOR	Hind Rectifiers Limited
H2008NL	Power Over Ethernet Magnetics	Pulse Engineering
H2017NL	Power Over Ethernet Magnetics	Pulse Engineering

Other Datasheets by Infineon

Part Number	Description
H20R1203	Reverse conducting IGBT
H20R120R2	IHW20R120R2
H20T120	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IHW20N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSpiceModels: http://www.infineon.