HYB25D256160BC Overview
HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM, Die Rev.
HYB25D256160BC Key Features
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is center-aligned with data for writes
- Differential clock inputs (CK and CK)
- Four internal banks for concurrent operation
- Data mask (DM) for write data
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Burst Lengths: 2, 4, or 8
- CAS Latency: (1.5), 2, 2.5, (3)