Infineon Technologies HYB25D256160BT
256-Mbit Double Data Rate SDRAM
| Part No. | HYB25D256160BT |
|---|---|
| Datasheet | HYB25D256160BT Download |
| Manufacturer |  Infineon Technologies |
| Description | 256-Mbit Double Data Rate SDRAM |
| Buy | Stock & Price |
FEATURES
CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency (MHz) DDR200 DDR266A DDR266 DDR333 -8 -7 -7F -6 100 133 133 133 125 143 143 166● Double data rate architecture: two data transfers per clock cycle
● Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
● DQS is edge-aligned with data for reads and is center-aligned with data for writes
● Differential clock inputs (CK and CK)
● Four internal banks for concurrent operation
● Data mask (DM) for write data
● DLL aligns DQ and DQS transitions with CK transitions
● Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS
● Burst Lengths: 2, 4, or 8
● CAS Latency: (1.5), 2, 2.5, (3)
● Auto Precharge option for each burst access
● Auto Refresh and Self Refresh Modes
● 7.8ms Maximum
