Infineon Technologies IAUC120N04S6N006
The parameter is not subject to production test - verified by characterization. For rare events and inrush currents the value may be exceeded.| Part No. | IAUC120N04S6N006 |
|---|---|
| Datasheet | IAUC120N04S6N006 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.6 m 120 A PG-TDSON-8-53● N-channel - Enhancement mode - Normal Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow 1
● 175°C operating temperature 1
● Green Product (RoHS compliant)
● 100% Avalanche tested Type IAUC120N04S6N006 Package Marking PG-TDSON-8-53 6N04N006 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current5) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ID I D,pulse V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, RthJA on 2s2p4,5) T C=25°C, t p =100µs E AS I D=60A, R G=25W I AS R G=25W V GS - P tot T C=25°C T j, T stg - Value Unit 405 A 120 55 1500 750 mJ 120 A ±20 V 187 W -55 ... +175 °C Rev. 1.1 page 1 2025-02-05 IAUC120N04S6N006 Parameter Symbol Conditions Thermal characteristics5) Thermal resistance, junction - case R thJC - Thermal resistance, junction - ambient4) R thJA - min.
