Infineon Technologies IAUC120N04S6N008
The parameter is not subject to production testing - specified by design. For rare events and inrush currents the value may be exceeded.| Part No. | IAUC120N04S6N008 |
|---|---|
| Datasheet | IAUC120N04S6N008 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID● N-channel - Enhancement mode - Normal Level
● AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green Product (RoHS compliant)
● 100% Avalanche tested 40 V 0.8 mW 120 A PG-TDSON-8-43 1 1 Type Package Marking IAUC120N04S6N008 PG-TDSON-8-43 6N04N008 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ID I D,pulse V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, RthJA on 2s2p2,4) T C=25°C E AS I D=60A, R G,min=25W I AS R G,min=25W V GS - P tot T C=25°C T j, T stg - Value Unit 314 A 120 43 480 400 mJ 60 A ±20 V 150 W -55 ... +175 °C Rev. 1.0 page 1 2020-08-24 IAUC120N04S6N008 Parameter Symbol Conditions Thermal characteristics2) Thermal...
