IAUZ30N06S5L140 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic level • MSL1 up to 260°C p...
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ions • N-channel - Enhancement mode - Logic level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 60 V 14 mW 30 A PG-TSDSON-8-32 Type IAUZ30N06S5L140 Package Marking PG-TSDSON-8-32 5N6L140 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) V GS=10V, DC current Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T a=85 °C, V GS=10 V, R thJA on 2s2p2,3) T C=25 °C, t p= 100 µs I D=15 A Avalanche current, single pulse I AS
IAUZ30N06S5L140 Datasheet
