IAUZ30N06S5L140
IAUZ30N06S5L140 is MOSFET manufactured by Infineon.
Features
- Opti MOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Logic level
- MSL1 up to 260°C peak reflow
- 175 °C operating temperature
- Green product (Ro HS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
60 V 14 m W 30 A
PG-TSDSON-8-32
Type IAUZ30N06S5L140
Package
Marking
PG-TSDSON-8-32 5N6L140
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Drain current
Symbol
Conditions
V GS=10 V, Chip limitation1,2)
V GS=10V, DC current
Pulsed drain current2) Avalanche energy, single pulse2)
I D,pulse E AS
T a=85 °C, V GS=10 V, R th JA on 2s2p2,3) T C=25 °C, t p= 100 µs
I D=15 A
Avalanche current, single pulse
I AS
- Gate source voltage
V GS
- Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
- Value
Unit
27 m...
