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IAUZ40N10S5L120 - power MOSFET

Key Features

  • OptiMOS™ power MOSFET for automotive.

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Full PDF Text Transcription for IAUZ40N10S5L120 (Reference)

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IAUZ40N10S5L120 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C p...

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ions • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 100 V 12 mW 40 A PG-TSDSON-8-33 Type IAUZ40N10S5L120 Package Marking PG-TSDSON-8-33 5N1L120 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Drain current Pulsed drain current2) ID I D,pulse V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, RthJA on 2s2p 2,4) T C=25 °C Avalanche energy, single pulse2) E AS I D=20 A Avalanche current, single pulse I AS - Gate so

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