IAUZ40N10S5L120
IAUZ40N10S5L120 is power MOSFET manufactured by Infineon.
Features
- Opti MOS™ power MOSFET for automotive applications
- N-channel
- Enhancement mode
- Logic Level
- MSL1 up to 260°C peak reflow
- 175 °C operating temperature
- Green product (Ro HS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 12 m W 40 A
PG-TSDSON-8-33
Type IAUZ40N10S5L120
Package
Marking
PG-TSDSON-8-33 5N1L120
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Drain current Pulsed drain current2)
ID I D,pulse
V GS=10 V, Chip limitation1,2) V GS=10V, DC current3) T a=85 °C, V GS=10 V, Rth JA on 2s2p 2,4)
T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=20 A
Avalanche current, single pulse
I AS
- Gate source voltage
V GS
- Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
- Value
Unit
33 m...
