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IAUZN04S7N026 - Automotive MOSFET

General Description

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Key Features

  • OptiMOSTM power MOSFET for automotive.

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Full PDF Text Transcription for IAUZN04S7N026 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IAUZN04S7N026. For precise diagrams, and layout, please refer to the original PDF.

IAUZN04S7N026 Automotive MOSFET OptiMOSTM 7 Power-Transistor Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level •...

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utomotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) 40 V 2.69 mΩ 114 A Type IAUZN04S7N026 Package PG-TSDSON-8-44 PG-TSDSON-8-44 Marking 4C Data Sheet Please read the Important Notice and Warnings at the end of this documen

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