IDC51D120T6H - Diode

Description

Attention please!

Features

1200V EMCON 4 technology.
soft, fast switching This chip is used for:.
medium / high power modules A.
low reverse recovery charge.
small temperature coefficient C.

Infineon

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Datasheet Details

Part number	IDC51D120T6H
Manufacturer	Infineon
File Size	111.62 KB
Description	Diode
Datasheet	IDC51D120T6H Datasheet
Additional preview pages of the IDC51D120T6H datasheet.

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Full PDF Text Transcription

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IDC51D120T6H Diode EMCON 4 High Power Chip FEATURES: • 1200V EMCON 4 technology • soft, fast switching This chip is used for: • medium / high power modules A • low reverse recovery charge • small temperature coefficient C Applications: • medium / high power drives Chip Type IDC51D120T6H VR IF 1200V 100A Die Size 7.00 x 7.30 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Pad metall Backside metall Die bond Wire bond Reject ink dot size Recommended storage environment 7.00 x 7.30 51.10 / 39.99 mm2 6.046 x 6.

Published: Jun 10, 2020 |