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IDH06G65C5 - Silicon Carbide Diode

Description

Schottky Barrier diodes.

thin-wafer technology.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Benchmark switching behavior.
  • No reverse recovery/ No forward recovery.
  • Temperature independent switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet preview – IDH06G65C5

Datasheet Details

Part number IDH06G65C5
Manufacturer Infineon
File Size 1.14 MB
Description Silicon Carbide Diode
Datasheet download datasheet IDH06G65C5 Datasheet
Additional preview pages of the IDH06G65C5 datasheet.

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Full PDF Text Transcription

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SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH06G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
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