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IDH06G65C6 Datasheet SiC Schottky Diode

Manufacturer: Infineon

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Overview

IDH06G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes.

The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF).

Key Features

  • Best in class forward voltage (1.25 V).
  • Best in class figure of merit (Qc x VF).
  • High dv/dt ruggedness (150 V/ns) Benefits.
  • System efficiency improvement.
  • System cost and size savings due to the reduced cooling requirements.
  • Enabling higher frequency and increased power density Potential.

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