Datasheet4U Logo Datasheet4U.com

IDP12E120 - Fast Switching Diode

Key Features

  • 1200 V diode technology.
  • Fast recovery.
  • Soft switching.
  • Low reverse recovery charge.
  • Low forward voltage.
  • Easy paralleling.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Qualified according to JEDEC for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IDP18E120 Fast Switching EmCon Diode Infineon Technologies
IDP04E120 Fast Switching EmCon Diode Infineon Technologies
IDP06E60 Fast Switching EmCon Diode Infineon Technologies
IDP08E65D1 Ultrafast Rectifier INCHANGE
IDP08E65D2 Ultrafast Rectifier INCHANGE

Other Datasheets by Infineon

Part Number Description
IDP15E60 Fast Switching Emitter Controlled Diode
IDP15E65D1 Diode
IDP15E65D2 Emitter Controlled Diode
IDP08E65D1 Diode
IDP08E65D2 Emitter Controlled Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IDP12E120 Fast Switching Diode Features • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Product Summary VRRM IF VF Tjmax 1200 V 12 A 1.65 V 150 °C PG-TO220-2 Type IDP12E120 Package PG-TO220-2 Ordering Code Marking Pin 1 PIN 2 PIN 3 - D12E120 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C VRRM IF Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.