Datasheet Details
| Part number | IDW10G120C5B |
|---|---|
| Manufacturer | Infineon |
| File Size | 835.31 KB |
| Description | Silicon Carbide Schottky Diode |
| Datasheet |
 IDW10G120C5B Datasheet
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General Description
Rev.
Key Features
- Revolutionary semiconductor material - Silicon Carbide.
- No reverse recovery current / No forward recovery.
- Temperature independent switching behavior.
- Low forward voltage even at high operating temperature.
- Tight forward voltage distribution.
- Excellent thermal performance.
- Extended surge current capability.
- Specified dv/dt ruggedness.
- Qualified according to JEDEC1) for target.