IDW10G120C5B - Silicon Carbide Schottky Diode

Product Overview

Infineon

Datasheet Details

Part number	IDW10G120C5B
Manufacturer	Infineon
File Size	835.31 KB
Description	Silicon Carbide Schottky Diode
Datasheet	IDW10G120C5B Datasheet
Additional preview pages of the IDW10G120C5B datasheet.

Product details

Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 5 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev.2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Repetitive peak reverse voltage Continuous forward current for Rth(j-c,max) TC = 156°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / No forward recovery.
Temperature independent switching behavior.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance.
Extended surge current capability.
Specified dv/dt ruggedness.
Qualified according to JEDEC1) for target.

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Published: Jan 26, 2016 |