Datasheet Summary
Silicon Carbide Schottky Diode
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
Industrial Power Control
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
CoolSiCTM SiC Schottky Diode
Features
:
- Revolutionary semiconductor material
- Silicon Carbide
- No reverse recovery current / No forward recovery
- Temperature independent switching behavior
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS...