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IDWD10G120C5 - 1200V Schottky Diode

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General Description

System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode

Overview

IDWD10G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky.

Key Features

  • No reverse recovery current / no forward recovery.
  • High surge current capability.
  • Temperature independent switching behaviour.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Specified dv/dt ruggedness.
  • Pb-free lead plating; RoHS compliant 1 2 Pin definition Potential.

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