IGC100T65T8RM
IGC100T65T8RM is IGBT manufactured by Infineon.
IGBT3 Chip Medium Power
Features
:
- 650V Trench & Field Stop technology
- high short circuit capability, self limiting short circuit current
- positive temperature coefficient
- easy paralleling
- Qualified according to JEDEC for target applications
Remended for:
- power modules
Applications:
- drives
Chip Type IGC100T65T8RM
VCE 650V
ICn 200A
Die Size 9.73 x 10.23 mm2
Package sawn on foil
Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal
9.73 x 10.23 See chip drawing
1.615 x 0.817 99.5 80 200 259 Photoimide 3200 nm AlSiCu...
