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IGC100T65T8RM - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG A

Key Features

  • 650V Trench & Field Stop technology.
  • high short circuit capability, self limiting short circuit current.
  • positive temperature coefficient.
  • easy paralleling.
  • Qualified according to JEDEC for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGC100T65T8RM IGBT3 Chip Medium Power Features:  650V Trench & Field Stop technology  high short circuit capability, self limiting short circuit current  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Recommended for:  power modules Applications:  drives Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.73 x 10.23 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal 9.73 x 10.23 See chip drawing 1.615 x 0.817 99.