IGC109T120T6RH
IGC109T120T6RH is IGBT manufactured by Infineon.
IGBT4 High Power Chip
Features
:
- 1200V Trench + Field stop technology
- low VCE(sat)
- soft turn off
- positive temperature coefficient
- easy paralleling
This chip is used for:
- medium / high power modules
Applications:
- medium / high power drives
Chip Type
VCE ICn
Die Size
IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Remended storage environment
7.48 x 14.61
4 x (2.761 x 6.458) 0.811 x...
