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IGC27T120T6L
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC27T120T6L
VCE ICn 1200V 25A
Die Size 4.99 x 5.45 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
4.99 x 5.45
3.182 x 3.962 0.826 x 1.31
mm 2
27.2 / 17.
IGC27T120T6L Datasheet
