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IGT60R070D1 - 600V enhancement-mode Power Transistor

Datasheet Summary

Features

  • Enhancement mode transistor.
  • Normally OFF switch.
  • Ultra fast switching.
  • No reverse-recovery charge.
  • Capable of reverse conduction.
  • Low gate charge, low output charge.
  • Superior commutation ruggedness.
  • Qualified for industrial.

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Datasheet preview – IGT60R070D1

Datasheet Details

Part number IGT60R070D1
Manufacturer Infineon
File Size 541.19 KB
Description 600V enhancement-mode Power Transistor
Datasheet download datasheet IGT60R070D1 Datasheet
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Full PDF Text Transcription

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IGT60R070D1 IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
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