Datasheet Details
| Part number | IGW40N65F5 |
|---|---|
| Manufacturer | Infineon |
| File Size | 2.20 MB |
| Description | IGBT |
| Datasheet |
 IGW40N65F5 Datasheet
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General Description
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Key Features
- High speed F5 technology offering.
- Best-in-Class efficiency in hard switching and resonant topologies.
- 650V breakdown voltage.
- Low gate charge QG.
- Ideal fit with SIC Schottky Diode in boost converters.
- Maximum junction temperature 175°C.
- Qualified according to JEDEC for target.