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IGW40N65F5A - IGBT

General Description

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Key Features

  • High speed F5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Maximum junction temperature 175°C.
  • Qualified according to AEC-Q101.
  • Green package (RoHS compliant).
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G C E.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW40N65F5A 650VIGBT Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW40N65F5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology  FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.