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IHW30N160R5 - IGBT

General Description

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Key Features

  • Powerful monolithic body diode with low forward voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IHW30N160R5 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode  Features: •Powerfulmonolithicbodydiodewithlowforwardvoltage •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •Pb-freeleadplating;RoHScompliant;halogenfree(according IEC61249-2-21) •CompleteproductspectrumandPSpiceModels: http://www.infineon.