IHW30N65R6 Overview
C Type IHW30N65R6 G Package PG-TO247-3 E Marking H30ER6 Datasheet .infineon. Please read the Important Notice and Warnings at the end of this document Revision 1.20 2021-03-22 IHW30N65R6 Reverse-Conducting IGBT Table of contents Table of contents Description.
IHW30N65R6 Key Features
- plete product spectrum and PSpice Models: http://.infineon./igbt/
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- High ruggedness and stable temperature behavior
- Low EMI
- Pb-free lead plating; RoHS pliant
- Powerful monolithic reverse-conducting diode with low forward voltage
- Very low VCEsat and low Eoff
- Very tight parameter distribution Potential