IKB30N65ES5 - IGBT

Description

C C G E Type IKB30N65ES5 G E Package PG-TO263-3 Marking K30EES5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-17 IKB30N65ES5 TRENCHSTOP™ 5 high speed soft switching IGBT Table of contents Table of cont

Features

VCE = 650 V.
IC = 30 A.
High speed smooth switching device for hard & soft switching.
Very low V CEsat, 1.35 V at nominal current.
650 V breakdown voltage.
Low gate charge QG.
IGBT co-packed with full rated current RAPID 1 fast antiparallel diode.
Maximum junction temperature Tvjmax = 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Pot.

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Datasheet Details

Part number	IKB30N65ES5
Manufacturer	Infineon
File Size	1.37 MB
Description	IGBT
Datasheet	IKB30N65ES5 Datasheet
Additional preview pages of the IKB30N65ES5 datasheet.

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IKB30N65ES5 TRENCHSTOP™ 5 high speed soft switching IGBT TRENCHSTOP™ 5 high speed soft switching IGBT co-packed with full current rated RAPID 1 fast and soft antiparallel diode Features • VCE = 650 V • IC = 30 A • High speed smooth switching device for hard & soft switching • Very low V CEsat, 1.35 V at nominal current • 650 V breakdown voltage • Low gate charge QG • IGBT co-packed with full rated current RAPID 1 fast antiparallel diode • Maximum junction temperature Tvjmax = 175°C • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.

Published: Jun 10, 2020 |