IKB30N65ES5 Description
C C G E Type IKB30N65ES5 G E Package PG-TO263-3 Marking K30EES5 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-17 IKB30N65ES5 TRENCHSTOP™ 5 high speed soft switching IGBT Table of contents Table of contents Description.
IKB30N65ES5 Key Features
- VCE = 650 V
- IC = 30 A
- High speed smooth switching device for hard & soft switching
- Very low V CEsat, 1.35 V at nominal current
- 650 V breakdown voltage
- Low gate charge QG
- IGBT co-packed with full rated current RAPID 1 fast antiparallel diode
- Maximum junction temperature Tvjmax = 175°C
- Pb-free lead plating; RoHS pliant
- plete product spectrum and PSpice Models: http://.infineon./igbt/ Potential