IKP30N65F5 - IGBT

Description

Features

C High speed F5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IKP30N65F5
Manufacturer	Infineon
File Size	2.19 MB
Description	IGBT
Datasheet	IKP30N65F5 Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP30N65F5 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKP30N65F5 Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •Completeproductspectruman

Published: Jan 26, 2016 |