IKP30N65H5 - IGBT

Description

Features

C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with RAPID 1 fast and soft antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IKP30N65H5
Manufacturer	Infineon
File Size	2.19 MB
Description	IGBT
Datasheet	IKP30N65H5 Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKP30N65H5 650VDuoPackIGBTanddiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IKP30N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating

Published: Jan 26, 2016 |