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IKQ100N120CH7 - IGBT

General Description

C Copyright © Infineon Te Type IKQ100N120CH7 G E Package PG-TO247-3-PLUS-NN3.7 Marking K100MCH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-07-03 IKQ100N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Techn

Key Features

  • VCE = 1200 V.
  • IC = 100 A.
  • Maximum junction temperature Tvjmax = 175°C.
  • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode TO-247PLUS.
  • 3Pin.
  • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C.
  • Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ).
  • Easy paralleling capability due to positive temperature coefficient.

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IKQ100N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 100 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode TO-247PLUS – 3Pin • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Easy paralleling capability due to positive temperature coefficient in VCEsat • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models: http://www.infineon.