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IKQ100N60T - IGBT

General Description

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Key Features

  • C.
  • Very low VCE(sat) 1.5 V (typ. ).
  • Maximum junction temperature 175°C.
  • Short circuit withstand time 5µs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode IKQ100N60T 600Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl TRENCHSTOPTMseries IKQ100N60T LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode  Features: C •VerylowVCE(sat)1.5V(typ.