IKY120N65EH7 Description
Type IKY120N65EH7 Package PG-TO247-4-PLUS-NN5.1 Marking K120EEH7 Datasheet .infineon. Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-04-27 IKY120N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Table of contents Table of contents Description.
IKY120N65EH7 Key Features
- VCE = 650 V
- IC = 120 A
- Low switching losses
- Very low collector-emitter saturation voltage VCEsat
- Very soft, fast recovery antiparallel diode
- Smooth switching behavior
- Humidity robustness
- Optimized for hard switching, two- and three-level topologies
- plete product spectrum and PSpice Models: http://.infineon./igbt/ Potential