IKY150N65EH7 Datasheet High speed and low saturation voltage 650V IGBT7

Manufacturer: Infineon

Overview: IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter.

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Datasheet Details

Part number	IKY150N65EH7
Manufacturer	Infineon
File Size	1.95 MB
Description	High speed and low saturation voltage 650V IGBT7
Download	IKY150N65EH7 Download (PDF)

General Description

Type IKY150N65EH7 Package PG-TO247-4-PLUS-NN5.1 Marking K150EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-11-15 IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Table of contents Table of contents Description .

Key Features

VCE = 650 V.
IC = 150 A.
Low switching losses.
Very low collector-emitter saturation voltage VCEsat.
Very soft, fast recovery antiparallel diode.
Smooth switching behavior.
Humidity robustness.
Optimized for hard switching, two- and three-level topologies.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Potential.

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