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IMBF170R650M1 - Silicon Carbide MOSFET

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Optimized for fly-back topologies.
  • 12V/0V gate-source voltage compatible with most fly-back controllers.
  • Very low switching losses.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • Fully controllable dV/dt for EMI optimization Benefits.
  • Reduction of system complexity.
  • Directly drive from fly-back controller.
  • Efficiency improvement and cooling effort reduction.
  • Enabling higher frequency Pot.

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IMBF170R650M1 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide  Optimized for fly-back topologies  12V/0V gate-source voltage compatible with most fly-back controllers  Very low switching losses  Benchmark gate threshold voltage, VGS(th) = 4.