IMBF170R650M1
Overview
- Revolutionary semiconductor material - Silicon Carbide
- Optimized for fly-back topologies
- 12V/0V gate-source voltage compatible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Fully controllable dV/dt for EMI optimization Benefits
- Reduction of system complexity
- Directly drive from fly-back controller
- Efficiency improvement and cooling effort reduction
- Enabling higher frequency Potential applications
