IMBF170R650M1 Description
IMBF170R650M1 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET.
IMBF170R650M1 Key Features
- Revolutionary semiconductor material
- Silicon Carbide
- Optimized for fly-back topologies
- 12V/0V gate-source voltage patible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Fully controllable dV/dt for EMI optimization
- Reduction of system plexity
- Directly drive from fly-back controller
- Efficiency improvement and cooling effort reduction