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IMBG120R045M1H - 1200V SiC Trench MOSFET

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Infineon

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IMBG120R045M1H 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMBG120R045M1H

Datasheet Details

Part number	IMBG120R045M1H
Manufacturer	Infineon
File Size	742.89 KB
Description	1200V SiC Trench MOSFET
Datasheet	IMBG120R045M1H Datasheet
Additional preview pages of the IMBG120R045M1H datasheet.

IMBG120R045M1H Product details

Features

Very low switching losses.
Short circuit withstand time 3 µs.
Fully controllable dV/dt.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
Robust against parasitic turn on, 0V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance.
Package creepage and clearance distance > 6.1mm.
Sense pin for optimized switching performance.

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Published: Aug 28, 2023 |