IMBG120R234M2H Overview
Description
Pin definition: - Pin 1 - Gate - Pin 2 - Kelvin sense contact - Pin 3…7 - Source - Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R234M2H Package PG-TO263-7-U01 Marking 12M2H234 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2024-11-08 IMBG120R234M2H CoolSiC™ 1200 V SiC MOSFET G2 Description.
Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 6.2 A at TC = 100°C
- RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage, VGS(th) = 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted
