IMBG40R025M2H Overview
Key Features
- Ideal for high frequency switching and synchronous rectification
- Commutation robust fast body diode with low Qfr
- Low RDS(on) dependency on temperature
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Recommended gate driving voltage 0 V to 18 V
- XT interconnection technology for best‑in‑class thermal performance
- 100% avalanche tested Potential applications
- Solar PV inverters
- Energy storage, UPS and battery formation
- Class‑D audio
